A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity
A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity
复制标题
具有光谱选择性的硅基PbSe量子点近红外光电探测器
DOI：
10.1039/d1nr02037d
复制
发表时间：
2021
期刊：
影响因子：
6.7
通讯作者：
Jiang Yadong
中科院分区：
文献类型：
--
作者：
Shi Yuanlin;Wu Zhiming;Dong Xiang;Chen Pengyu;Wang Jinquan;Yang Jun;Xiang Zihao;Shen Miao;Zhuang Yaming;Gou Jun;Wang Jun;Jiang Yadong
传统的光电探测器通常对大于光敏材料的带隙的光子做出响应。与传统的用于宽光谱检测的光电探测器相比，目前报道的PbS/PMMA/PbSe CQD硅基光电探测器可以检测光谱选择性光源。这归因于具有特定功能的两个层，顶部的过滤层和与硅沟道接触的光敏层。该装置的每个目标源对非目标源的选择性因子大于10。s-PD（选择性光电探测器）具有三个显著的优点：能够通过容易地调节量子点的大小来可调谐地调节可检测的光谱范围。第二是使用新的架构来实现高性能的选择性光电探测器，最后是易于与硅集成。上述特性使该设备能够满足特定领域的需求，如安全通信，监控和红外成像。
Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQD silicon-based photodetectors can detect spectrally selective light sources. This is attributed to two layers with specific functions, a filter layer on top and a photosensitive layer in contact with the silicon channel. Each of the target sources of the device has a selectivity factor of more than 10 against non-target sources. The s-PD (selective photodetector) has three significant advantages: the ability to tunably adjust the detectable spectral range by easily adjusting the size of QDs. The second is using a new architecture to achieve a high-performance selective photodetector, and finally, the ease-of-integration with silicon. The above features enable the device to meet the needs of particular fields such as secure communication, surveillance, and infrared imaging.