Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
复制标题
全氮化物AlN/n-GaN金属-绝缘体-半导体器件中可重复双极电阻开关及其机制
DOI：
10.1063/1.4901747
复制
发表时间：
2014-11-10
影响因子：
4
通讯作者：
Miao, Guoqing
中科院分区：
文献类型：
--
作者：
Chen, Yiren;Song, Hang;Miao, Guoqing
在全氮化AlN/n-GaN金属绝缘体半导体器件中展示了可重复的双极电阻开关特性。其机理符合陷阱控制的空间电荷限制电流理论，可归因于AlN中的氮空位作为电子陷阱，通过捕获/脱陷电子而形成/破裂电子传输通道。这项研究将使金属-有机化学气相沉积原位生长III族氮化物成为下一代非挥发性存储器件的候选材料。此外，它还有利于用氮化物高电子迁移率晶体管构成单片集成单晶体管单阻存储器。
Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.