Observation of gapless nodal-line states in NdSbTe

Observation of gapless nodal-line states in NdSbTe
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DOI:
10.1103/physrevmaterials.7.044202
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发表时间:
2022-10
影响因子:
3.4
通讯作者:
Sabin Regmi;Robert Smith;Anup Pradhan Sakhya;Milo Sprague;Mazharul Islam Mondal;I. B. Elius;Nathan Valadez;A. Ptok;D. Kaczorowski;M. Neupane
Sabin Regmi;Robert Smith;Anup Pradhan Sakhya;Milo Sprague;Mazharul Islam Mondal;I. B. Elius;Nathan Valadez;A. Ptok;D. Kaczorowski;M. Neupane
中科院分区:
材料科学3区
文献类型:
--
作者:
Sabin Regmi;Robert Smith;Anup Pradhan Sakhya;Milo Sprague;Mazharul Islam Mondal;I. B. Elius;Nathan Valadez;A. Ptok;D. Kaczorowski;M. Neupane

文献摘要

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在ZrSiS型节线半金属中,稀土(Ln)系一直是研究的对象,以此为基础研究拓扑与可能的磁性有序和电子关联的相互作用,这些关联可能源于Ln4f电子的存在。在本研究中,我们利用角度分辨光电子能谱、第一性原理计算和热力学测量,对LnSbTe系统--NdSbTe--进行了深入的研究。我们在实验上检测到了多个无间隙节线状态的存在,这得到了第一性原理计算的很好支持。沿块体X-R方向存在弥散和几乎不弥散的节线。在G-M方向上,另一条节线出现在费米能级以下,它是由费米速度较高的、似乎对光偏振敏感的带形成的。我们的研究提供了一个新的LnSbTe材料系统的电子结构的洞察力,这将有助于理解Ln元素与这些系统中的拓扑电子结构的联系。
Lanthanide (Ln) based systems in the ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln 4f electrons. In this study, we carried out a thorough study of a LnSbTe system - NdSbTe - by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost non-dispersive nodal-line exist along the bulk X-R direction. Another nodal-line is present well below the Fermi level across the G- M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Our study provides an insight into the electronic structure of a new LnSbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structure in these systems.