Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy.
Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy.
复制标题
通过氢化物气相外延在 (0001) AlN 上成核和生长 (10(1)over-bar1) 半极性 AlN
DOI：
10.1038/srep26040
复制
发表时间：
2016-05-17
影响因子：
4.6
通讯作者：
Xu K
中科院分区：
文献类型：
--
作者：
Liu T;Zhang J;Su X;Huang J;Wang J;Xu K
纤锌矿结构的AlN被广泛用于深紫外光电子器件（DUV），其通常在现有衬底上沿纤锌矿结构的[0001]方向沿着生长。然而，由于压电极化和自发极化作用，在AlN材料沿着[0001]轴方向上产生了巨大的内部静电场，极大地限制了AlN基深紫外发光二极管的内量子效率。通过将外延生长方向从传统的极性c方向改变为极性较小的晶体方向，可以大大降低内部场。孪晶是由两个或多个具有相同晶格和组成但不同晶体取向的畴组成的晶体。换句话说，可以诱导孪晶改变晶体方向。在本工作中，我们通过构造（）和（）孪晶结构，证明了（）半极性AlN在（0001）AlN上的外延生长。该方法相对于传统方法是可行的，对开发高质量的半极性氮化铝具有巨大的前景。
Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.