ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
复制标题
Si-SiO2 界面中界面态电性质的能量依赖性
DOI：
10.1063/1.1653234
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发表时间：
1970
影响因子：
4
通讯作者：
A. Goetzberger
中科院分区：
文献类型：
--
作者：
W. Fahrner;A. Goetzberger
用MOS电导技术测量了表面态密度、俘获截面和频率色散的能量依赖性。俘获截面在耗尽区是恒定的，并向能带边缘呈指数下降。对于湿氧化物，频率色散因子与表面电位无关，而对于干氧化物，频率色散因子在平带点处变得很小。
Measurements of the energy dependence of surface‐state density, capture cross section, and frequency dispersion were undertaken with the MOS conductance technique. Capture cross sections are constant in the depletion range and decrease exponentially towards the band edge. The frequency dispersion factor is independent of surface potential for wet oxide and becomes very small at the flatband point for dry oxides.