Interferometric lithography for nanoscale fabrication
Interferometric lithography for nanoscale fabrication
复制标题
DOI：
10.1117/12.352681
复制
发表时间：
1999-07
影响因子：
1.4
通讯作者：
S. H. Zaidi;S. Brueck
中科院分区：
文献类型：
--
作者：
S. H. Zaidi;S. Brueck
干涉光刻(IL)技术提供了一种经过验证的、低成本、大面积的纳米图形能力，其特征分辨率约为50 nm。结合离子刻蚀、各向异性刻蚀和3D氧化技术，提供了一套在大面积上获得范围广泛的硅纳米结构的技术，并且具有良好的一致性。光学表征包括测量大范围一维光栅轮廓的反射率，以及硅纳米结构的拉曼散射表征。拉曼散射存在三个区域：体相、共振增强、不对称和分裂。
Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching and with 3D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures over large areas and wit good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk, resonant enhanced and asymmetry and splitting.