Large-area fabrication of silicon nanostructures by templated nanoparticle arrays
Large-area fabrication of silicon nanostructures by templated nanoparticle arrays
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DOI：
10.1117/12.2264995
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发表时间：
2017-05
影响因子：
5.7
通讯作者：
G. Hamdana;M. Bertke;T. Südkamp;H. Bracht;H. S. Wasisto;E. Peiner
中科院分区：
文献类型：
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作者：
G. Hamdana;M. Bertke;T. Südkamp;H. Bracht;H. S. Wasisto;E. Peiner
利用聚苯乙烯（PS）纳米粒子作为掩模，成功地实现了一种改进的纳米级加工技术，以生产垂直排列的硅纳米线（SiNW）阵列。应用具有不同形状和开口尺寸的光刻微结构来确定制造区域，然后沉积PSS/PDDA/PSS层。因此，大部分的基板区域被覆盖和大范围的有序的PS纳米粒子可以通过详细的旋涂参数和表面性质的调查获得。然后，调节颗粒尺寸，得到从459 ± 9 nm下降至248 ± 11 nm的特征直径。使用此作为用于电感耦合等离子体（ICP）低温干法蚀刻的掩模，可以实现从225 ± 18 nm到146 ± 7 nm的高密度SiNW的特征尺寸变化。最后，开发了一种具有简单图案化步骤的方法，并在100多个样品上进行了测试，作为可靠的纳米结构实现的替代方法。
An improved nanoscale processing technique by using polystyrene (PS) nanoparticles as a mask is successfully implemented to produce vertically aligned silicon nanowire (SiNW) arrays. Lithographic microstructures with different shapes and opening sizes were applied to determine the fabrication area followed by deposition of a PSS/PDDA/PSS layer. Therefore, most of the substrate areas were covered and a large-range order of PS nanoparticles can be acquired by detailed investigation of spin-coating parameters and surface properties. Afterwards, the particle size was modulated resulting in feature diameters ranging from 459 ± 9 nm down to 248 ± 11 nm. Using this as a mask for inductively coupled plasma (ICP) cryogenic dry etching, a feature-size variation of high-density SiNWs from 225 ± 18 nm to 146 ± 7 nm can be achieved. Finally, a method with simple patterning steps has been developed and tested on more than 100 samples emerging as an alternative method for reliable nanostructure realization.