Magnetoresistance and efficiency measurements of Alq3-based OLEDs
Magnetoresistance and efficiency measurements of Alq3-based OLEDs
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DOI：
10.1103/physrevb.75.094423
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发表时间：
2007-03-01
影响因子：
3.7
通讯作者：
Gibbs, M. R. J.
中科院分区：
文献类型：
--
作者：
Desai, Pratik;Shakya, P.;Gibbs, M. R. J.
对氧化铟锡/N,N'-二苯基-N,N'-双(3 - 甲基苯基)-(1,1'-联苯)-4,4'-二胺/三(8 - 羟基喹啉)铝/阴极有机发光二极管结构的磁电阻和效率进行了测量，测量是磁场和阴极类型的函数。已经发现，只有当器件发光时才会出现磁电阻，这表明磁电阻与激子形成有关。比较外加磁场对器件效率和磁电阻的影响表明，磁电阻不可能是由于复合电流引起的。我们认为，这种效应可能是由于器件内的三线态激子对电荷载流子的俘获。
Magnetoresistance and efficiency measurements of indium tin oxide/N,N-'-diphenyl-N,N-' bis(3-methylphenyl)-(1,1(')-biphenyl)-4,4(') diamine/aluminum tris(8-hydroxyquinoline)/cathode organic light-emitting diode structures have been made as a function of magnetic field and cathode type. It has been found that magnetoresistance occurs only when there is light emission from the devices, which suggests that the magnetoresistance is related to exciton formation. Comparison of the effects of applied field on device efficiency and magnetoresistance shows that the magnetoresistance cannot be due to the recombination current. We suggest that the effect may be due to trapping of charge carriers at triplet excitons within the device.