Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
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DOI：
10.1063/1.3622306
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发表时间：
2011-08-01
影响因子：
4
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Liu, Han;Ye, Peide D.
我们报告了双栅极调制的拓扑绝缘体场效应晶体管（TI FET）的Bi 2 Te 3薄片与原子层沉积（ALD）的Al 2 O3高k电介质集成。原子力显微镜研究表明，ALD Al 2 O3是均匀生长在这种层状结构的通道材料。电学特性表明，ALD前体的正确选择和相关的表面化学在基于Bi 2 Te 3的TI FET的器件性能中起着关键作用。我们在这些器件上同时实现了顶栅和底栅控制，并且采用同时双栅控制实现了76.1%的最高调制率。(C)2011年美国物理学会。[doi：10.1063/1.3622306]
We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622306]