Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.
Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.
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DOI：
10.1364/oe.20.027384
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发表时间：
2012-12
期刊：
影响因子：
3.8
通讯作者：
Huimin Lu;T. Yu;G. Yuan;C. Jia;Gen-xiang Chen;Guoyi Zhang
中科院分区：
文献类型：
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作者：
Huimin Lu;T. Yu;G. Yuan;C. Jia;Gen-xiang Chen;Guoyi Zhang
用基于k·p方法的理论模型研究了富铝AlGaN/AlN量子阱(QW)的光学偏振特性。数值结果表明，富铝AlGaN/AlN量子阱中存在价子带耦合，影响TE和TM偏振分量的峰值发射波长和发射强度。特别是，当CH1接近HH1和LH1子带时，价子带耦合可能足够强，以调制将主导发射从TE偏振切换到TM偏振的临界Al含量。认为价子带耦合对自发辐射的偏振特性有重要影响，在设计高效的AlGaN基紫外(UV)发光二极管时应考虑价子带耦合效应。
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.