X-Ray Stress Measurements of Single Crystal in Local Area Using Synchrotron Radiation.
X-Ray Stress Measurements of Single Crystal in Local Area Using Synchrotron Radiation.
复制标题
使用同步辐射对单晶进行局部 X 射线应力测量。
DOI：
10.2472/jsms.50.783
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
H. Misawa
中科院分区：
文献类型：
--
作者：
H. Suzuki;K. Akita;Y. Yoshioka;H. Misawa
利用同步辐射进行了单晶硅局部区域的X射线应力测量。在实验中，束线3A（BL 3A）的光子工厂的高能加速器研究机构，筑波，日本，使用。采用χ-振荡法作为检测理想衍射轮廓的样品振荡方法。在使用同步辐射的情况下，可以使用单色器选择波长，使得衍射角可以变为高角度，其中可以进行高精度应变测量。因此，应力测量的精度比使用特征X射线更高。使用四点弯曲装置在三个步骤中对试样施加应力。用φ50μm平行光管测量了每一步中三个不同衍射面的衍射角，并由峰位移计算了应力。测量的应力与使用应变计评估的施加应力一致。用φ30μm准直器测量了单晶硅上直径为400μm的圆孔边缘附近的应力分布。使用四点弯曲装置施加应力，并在从圆孔边缘到240μm的五个点处测量应力。实测应力分布与有限元分析结果基本一致。然而，为了更准确地获得应力分布，有必要进一步减小梁的尺寸。
X-ray stress measurements in a local area of a single crystal silicon were carried out using synchrotron radiation. In the experiment, the beam line 3A (BL3A) in the Photon Factory of the High Energy Accelerator Research Organization, Tsukuba, Japan, was utilized. The χψ-oscillation method was used as the oscillation method of a specimen for detecting a perfect diffraction profile. In the case of using synchrotron radiation, a wavelength can be selected using a monochromater so that the diffraction angle may become high angle where the highly-accurate strain measurement is possible. Therefore, accuracy of the stress measurement is improved more than using characteristic X-rays. The stresses in three steps were applied on a specimen using a four-point bending device. The diffraction angles of three different diffraction planes were measured in each step using the φ50μm collimator, and the stresses were calculated from the peak shift. The measured stresses agreed well with the applied stresses evaluated using a strain gage. Also, the stress distribution near the edge of the circular hole of the diameter of 400μm which was made on a single crystal silicon was measured using the φ30μm collimator. The stress was applied using a four-point bending device, and the stresses were measured at five points from the edge of the circular hole to 240μm. The measured stress distributions agreed with the FEM result. However it is necessary that the beam size is more decreased in order to obtain the stress distributions more accurately.