Detective quantum efficiency of the 25 μm pixel size Imaging Plate for transmission electron microscopes
Detective quantum efficiency of the 25 μm pixel size Imaging Plate for transmission electron microscopes
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用于透射电子显微镜的 25 μm 像素尺寸成像板的检测量子效率
DOI：
10.1093/oxfordjournals.jmicro.a023523
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
T. Oikawa
中科院分区：
文献类型：
--
作者：
A. Taniyama;D. Shindo;T. Oikawa
测量了透射电子显微镜（TEM）用25 μm像素成像板的信噪比（S/N）和量子探测效率（DQE）随入射电子数的变化。信噪比随入射电子数的增加而增加，但在高曝光量区域趋于饱和，虽然在该区域入射电子数与图像信号保持良好的线性关系。在100 kV和200 kV下的DQE在高增益模式下分别具有约70%和45%的最大值，在低增益模式下分别具有约20%和10%的最大值。在600 kV下的DQE最大值为1.30%，而在1250 kV下的DQE最大值为1.5%。比较S/N曲线和DQE曲线，讨论了获得高质量TEM图像的最佳电子强度区域。
The signal to noise ratio (S/N) and the detective quantum efficiency (DQE) of the 25 μm pixel Imaging Plate for transmission electron microscopy (TEM) were measured as a function of the number of incident electrons. The S/N increased with increasing the number of incident electrons, but tended to saturate in high exposure region, although the good linearity between the number of incident electrons and image signal was reserved in the region. The DQE at 100 kV and 200 kV had the maximum values of about 70% and 45% under high gain mode, and about 20% and 10% under low gain mode, respectively. The DQE at 600 kV had the maximum value of ˜30%, while that at 1250 kV had ˜5%. Comparing the S/N curves with the DQE curves, the optimum electron intensity regions for high quality TEM images were discussed.