Vanadium-Doped Cadmium Manganese Telluride (Cd1-x Mn x Te) Crystals as X- and Gamma-Ray Detectors
Vanadium-Doped Cadmium Manganese Telluride (Cd1-x Mn x Te) Crystals as X- and Gamma-Ray Detectors
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DOI：
10.1007/s11664-009-0780-9
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发表时间：
2009-08-01
影响因子：
2.1
通讯作者：
James, R. B.
中科院分区：
文献类型：
--
作者：
Hossain, A.;Cui, Y.;James, R. B.
CdMnTe作为室温伽马射线探测器提供了优于CdZnTe的几个潜在优点，但是其生长过程中的许多缺点阻碍了具有高电阻率和高电子寿命的大的无缺陷单晶的生产。在这里，我们报告我们的发现，在几个钒掺杂生长以及退火的Cd 1-x Mn（x）Te晶体的缺陷，使用腐蚀坑技术。我们从原始晶圆中精心挑选单晶体来制造和测试伽马射线探测器。我们描述的质量处理的Cd 1-x Mn（x）Te表面，并比较它们与类似处理的CdZnTe晶体。我们讨论了表征实验，旨在澄清制造的探测器的电性能，并评估其性能的伽马射线光谱仪。
CdMnTe offers several potential advantages over CdZnTe as a room- temperature gamma-ray detector, but many drawbacks in its growth process impede the production of large, defect-free single crystals with high electrical resistivity and high electron lifetimes. Here, we report our findings of the defects in several vanadium-doped as-grown as well as annealed Cd1-x Mn (x) Te crystals, using etch pit techniques. We carefully selected single crystals from the raw wafer to fabricate and test as a gamma-ray detector. We describe the quality of the processed Cd1-x Mn (x) Te surfaces, and compare them with similarly treated CdZnTe crystals. We discuss the characterization experiments aimed at clarifying the electrical properties of fabricated detectors, and evaluate their performance as gamma-ray spectrometers.