Even-odd filling-factor switching in one-dimensional lateral superlattices.
Even-odd filling-factor switching in one-dimensional lateral superlattices.
复制标题
一维横向超晶格中的奇偶填充因子切换。
DOI：
10.1103/physrevb.54.16397
复制
发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Weimann
中科院分区：
文献类型：
--
作者：
Tornow;Weiss;Manolescu;Menne;Klitzing;Weimann
研究了受到一维横向电势调制的二维电子系统的磁阻对于各种电势幅度的影响。朗道能级分裂和调制展宽之间的相互作用被证明可以产生舒布尼科夫德哈斯电阻最小值从偶数到奇数填充因子的转变。该效应提供了确定电位幅度的工具。单粒子模型内的计算与朗道带的范霍夫式结构的证据一致。
The magnetoresistance of a two-dimensional electron system, subjected to a one- dimensional lateral potential modulation is studied for various potential amplitudes. The interplay between Landau level splitting and modulation broadening is shown to generate a transition from even to odd filling factors for the Shubnikov�de Haas resistance minima. The effect provides a tool to determine the potential amplitude. Calculations within a one-particle model agree with this evidence of the van Hove� like structure of the Landau bands.