High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride
High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride
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DOI：
10.1143/apex.1.072201
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发表时间：
2008-06
影响因子：
2.3
通讯作者：
K. Okamoto;Taketoshi Tanaka;M. Kubota
中科院分区：
文献类型：
--
作者：
K. Okamoto;Taketoshi Tanaka;M. Kubota
我们在连续波(CW)工作下实现了481 nm激光波长下的非极性m平面GaN基蓝绿激光二极管(LDS)。最大输出功率大于20 mW，阈值电流为61 mA，阈值电流密度为6.1kA/cm2。在459~481 nm的激光波长范围内，尽管每个LD的腔面反射率是固定的，但JTH值和电致发光峰值波长在459~481 nm范围内不随激光波长的变化而变化。此外，斜率效率随着激光波长的增加而增大，从459 nm的0.37W/A增加到481 nm的0.49W/A。这是非极性GaN基材料相对于c平面材料在实现绿色激光二极管方面的显著优势。
We demonstrated nonpolar m-plane GaN-based blue-green laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 481 nm. A maximum output power of more than 20 mW was achieved, for which the threshold current and the corresponding threshold current density (Jth) were 61 mA and 6.1 kA/cm2, respectively. The value of Jth and the electroluminescence peak wavelength shift until lasing did not change with lasing wavelength in the range from 459 to 481 nm, though the reflectivities of the cavity facets were fixed for each LD. In addition, the slope efficiency increased with increasing lasing wavelength, from 0.37 W/A at 459 nm to 0.49 W/A at 481 nm. This is the remarkable advantages of nonpolar GaN-based material compared to c-plane material for the realization of green LDs.