A Survey of Wide Bandgap Power Semiconductor Devices
A Survey of Wide Bandgap Power Semiconductor Devices
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DOI：
10.1109/tpel.2013.2268900
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发表时间：
2014-05-01
影响因子：
6.7
通讯作者：
Rebollo, Jose
中科院分区：
文献类型：
--
作者：
Millan, Jose;Godignon, Philippe;Rebollo, Jose
宽带隙半导体显示出优越的材料特性，使潜在的功率器件能够在比当前硅技术更高的温度、电压和开关速度下工作。因此，新一代的功率器件正在开发用于功率变换器的应用，传统的Si功率器件表现出有限的操作。这些新型功率半导体器件的使用将使现有功率变换器的性能得到重要改进，并有助于开发新的功率变换器，从而提高电能转换的效率，并使电能得到更合理的利用。目前，SiC和GaN是这些新型功率器件中最有前途的半导体材料，因为它们具有出色的性能、起始材料的商业可用性以及它们的技术过程的成熟。本文综述了基于SiC和gan的功率半导体器件的最新进展，并对这一代新器件的技术状况进行了全面的概述。
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.