Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes
Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes
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DOI：
10.1063/1.5108870
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发表时间：
2018-05
影响因子：
3.2
通讯作者：
Z. Cao;T. Veal;M. Ashwin;K. Dawson;I. Sandall
中科院分区：
文献类型：
--
作者：
Z. Cao;T. Veal;M. Ashwin;K. Dawson;I. Sandall
研究了生长后热退火对GaSbBi肖特基势垒二极管的影响。研究了退火温度和退火时间对材料质量和电特性的影响。的I-V特性表明一个更好的理想因子和更少的漏电流在反向偏置，作为退火温度增加到500 °C的持续时间为30分钟。X射线衍射和扫描透射电子显微镜测量进行验证，铋组合物在退火过程中不受影响。能量色散X-射线分析表明，Sb集群发生在高退火温度下，导致伴随的电性能的退化。当退火温度为500 °C，退火时间为30 min时，器件的电特性最佳，理想因子为1.3。研究了退火温度和退火时间对材料质量和电特性的影响。的I-V特性表明一个更好的理想因子和更少的漏电流在反向偏置，作为退火温度增加到500 °C的持续时间为30分钟。X射线衍射和扫描透射电子显微镜测量进行验证，铋组合物在退火过程中不受影响。能量色散X-射线分析表明，Sb集群发生在高退火温度下，导致伴随的电性能的退化。当退火温度为500 °C，退火时间为30 min时，二极管的电特性最佳，理想因子为1.3。
The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 °C for a duration of 30 min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 °C for 30 min, resulting in an ideality factor of 1.3 being achieved.The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 °C for a duration of 30 min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 °C for 30 min, resulting in an ideality factor of 1.3 being achieved.