Microfabrication of a Free-Standing NiW Alloy Film as a Wavelength-Selective Surface
Microfabrication of a Free-Standing NiW Alloy Film as a Wavelength-Selective Surface
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作为波长选择表面的独立式 NiW 合金薄膜的微加工
DOI：
10.1166/jctn.2015.3809
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发表时间：
2015
影响因子：
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通讯作者：
Kentaro Iwami,Norihiro Umeda
中科院分区：
文献类型：
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作者：
Nashun;Kentaro Iwami,Norihiro Umeda
本文报道了一种基于NiW电镀和硅消失模工艺制备耐热合金的方法。采用电子束光刻和深反应离子刻蚀技术在硅模具上制作了周期性微图形。随后在沉积在硅模具上的Au种子层上电镀厚度为2.1 μm的耐热NiW合金膜，随后最终蚀刻硅模具，并且释放独立的NiW合金膜。用能量色散X射线光谱仪和傅里叶变换红外光谱仪对NiW薄膜进行了表征。该膜含有24.6原子%的钨，并且其熔点估计为1675 °C。证实了薄膜的光谱反射率的改变，并观察到了1.4 μm的发射峰，该发射波长与常规Ge红外光伏电池的吸收带相一致。利用Ge光电二极管和微图案化NiW薄膜的焦耳加热实现了热光伏发电，辐射效率达到9.13 × 10-6。
We here report a method for fabricating a heat-resistant alloy based on NiW electroplating and silicon lost-molding processes. A periodic micropattern was fabricated on a silicon mold by electron-beam lithography and deep reactive-ion etching. A heat-resistive NiW alloy film with a thickness of 2.1 μm was subsequently electroplated onto an Au seed layer deposited on the silicon mold, following which the silicon mold was finally etched, and a free-standing NiW alloy film was released. The NiW film was characterized by energy-dispersive X-ray spectrometry and Fourier transform infrared spectrophotometer. The film contained 24.6 at% tungsten, and its melting point was estimated to be 1675 °C. Modification of the film's spectral reflectivity was confirmed, and an emission peak at 1.4 μm was observed; This emission wavelength agrees well with the absorption band of a conventional infrared photovoltaic cell of Ge. Thermophotovoltaic power generation was demonstrated using a Ge photodiode and Joule heating of the micropatterned NiW film, and a radiation efficiency of 9.13 × 10–6 was achieved.