Cryogenic refractive indices of ZnSe, Ge, and Si at 10.6 microm.
Cryogenic refractive indices of ZnSe, Ge, and Si at 10.6 microm.
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ZnSe、Ge 和 Si 在 10.6 微米处的低温折射率。
DOI：
10.1364/ao.30.004014
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发表时间：
1991
期刊：
影响因子：
1.9
通讯作者：
William L. Wolfe
中科院分区：
文献类型：
--
作者：
Jeffrey M. Hoffman;William L. Wolfe
在20-300 K的温度范围内，对硒化锌、锗和硅在10.6 μ m的折射率进行了温度函数的测量。通过找到垂直入射到直角三角形棱镜上的光束的偏离角来进行每次测量。折射率对温度的曲线已被拟合成多项式，并且折射率随温度的变化值作为温度的函数给出。
Refractive-indexm easurementsa s a function of temperature have been made for zinc selenide, germanium, and silicon at 10.6 jlm over a temperature range of 20-300 K. Each measurement was made by finding the deviation angle of a beam perpendicularly incident on a right triangle prism. The curves for index of refraction versus temperature have been fitted to polynomials, and values for the change in index with temperature are given as a function of temperature.