Size effects on void growth in single crystals with distributed voids
Size effects on void growth in single crystals with distributed voids
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DOI：
10.1016/j.ijplas.2007.07.015
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发表时间：
2008-04
影响因子：
9.8
通讯作者：
U. Borg;C. F. Niordson;J. Kysar
中科院分区：
文献类型：
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作者：
U. Borg;C. F. Niordson;J. Kysar
本文采用有限变形应变梯度晶体塑性理论，数值研究了含均匀分布圆柱形孔洞的单晶中孔洞尺寸对孔洞生长的影响。本文分析了具有三个面内滑移系的单晶的平面应变胞元模型。据观察，小空隙允许更大的整体应力水平比大空隙的所有考虑的应力三轴。发现在低应力三轴度下，较小的空隙的空隙生长量会受到抑制。观察到显着差异的分布中的滑移和变形的空隙的形状为不同的空隙尺寸。此外，发现晶格的取向对结果具有显著的影响，特别是对于较小的空隙尺寸。
The effect of void size on void growth in single crystals with uniformly distributed cylindrical voids is studied numerically using a finite deformation strain gradient crystal plasticity theory with an intrinsic length parameter. A plane strain cell model is analyzed for a single crystal with three in-plane slip systems. It is observed that small voids allow much larger overall stress levels than larger voids for all the stress triaxialities considered. The amount of void growth is found to be suppressed for smaller voids at low stress triaxialities. Significant differences are observed in the distribution of slips and on the shape of the deformed voids for different void sizes. Furthermore, the orientation of the crystalline lattice is found to have a pronounced effect on the results, especially for the smaller void sizes.