Soluble site density model for negative and positive chemically amplified resists
Soluble site density model for negative and positive chemically amplified resists
复制标题
负性和正性化学放大抗蚀剂的可溶位点密度模型
DOI：
10.1116/1.1535928
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发表时间：
2003
影响因子：
1.4
通讯作者：
L. Ocola
中科院分区：
文献类型：
--
作者：
L. Ocola
可溶性位点密度（SSD）模型假设固态密度的变化可以解释负、正化学放大抗蚀剂溶解速率的变化，其溶解机制依赖于反应速率。在这种情况下，负阻片的成像机制可以通过去除可溶性位点而不是增加分子量来解释。在相同的初始条件下，该模型预测酸在负阻中的扩散速度比在等效的正阻中的扩散速度快。该模型的应用有助于解释为什么负极抗压剂始终表现出比正极抗压剂更低的对比度。可渗透的抗蚀剂表面和抗蚀剂能量吸收的深度依赖导致固态硬盘的深度分布不均匀，这可能导致超薄抗蚀剂膜（厚度< 150nm）的灵敏度下降。利用SSD模型对电阻光栅的模拟结果与实验结果进行了比较，结果与实验结果在侧壁粗糙度上有很好的一致性。固态硬盘的空间波动是由ac引起的。
The soluble site density (SSD) model assumes that changes in SSD account for changes in dissolution rate for negative and positive chemically amplified resists with reaction rate dependent dissolution mechanisms. In this context, the image mechanism in negative resists can be explained by removal of soluble sites instead of increase of molecular weight. Under identical initial conditions this model predicts that acid diffuses faster in negative resists than in equivalent positive resists. Application of this model helps explain why negative resists consistently exhibit less contrast than positive resists. Permeable resist surfaces and the depth dependence in resist energy absorption create a non-uniform depth profile of SSD, which can cause a decrease in sensitivity in ultrathin resist films (<150 nm thick). Simulations of resist gratings using the SSD model have been compared to experimental results with qualitatively good agreement in sidewall roughness. Spatial fluctuations of the SSD arise from the ac...