Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films
复制标题
与 HfON 和 Y2O3 薄膜相比，用于非易失性存储器应用的 HfYON 薄膜的电荷捕获性能得到改善
DOI：
10.1063/1.3639275
复制
发表时间：
2011-09-12
影响因子：
4
通讯作者：
Lai, P. T.
中科院分区：
文献类型：
--
作者：
Huang, X. D.;Liu, L.;Lai, P. T.
利用Al/HfYON/SiO_2/Si结构研究了HfYON薄膜的电荷俘获特性。用透射电子显微镜和X射线光电子能谱对薄膜的物理特性进行了研究。通过提取其电荷陷阱质心和电荷陷阱密度证实了所提出的器件比使用HfON或Y2O3作为电荷陷阱层的样品具有更高的电荷陷阱效率，从而显示出更好的电荷陷阱特性。此外，Al/Al_2O_3/HfYON/SiO_2/Si结构显示出高的编程速度(+14V，1ms)、大的存储窗口(6.0V，±14V，1 S)和良好的保持性能，进一步证明了HfYON是一种很有前途的非易失性存储器件的电荷俘获层。
The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y2O3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al2O3/HfYON/SiO2/Si structure shows high program speed (4.5 V at +14 V, 1 ms), large memory window (6.0 V at ±14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications.