The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration
The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration
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DOI：
10.1016/j.orgel.2017.11.020
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发表时间：
2018-02-01
影响因子：
3.2
通讯作者：
Kahn, Antoine
中科院分区：
文献类型：
--
作者：
Euvrard, Julie;Revaux, Amelie;Kahn, Antoine
高分子聚合物聚[(4,8-二-（2-乙基己氧基）-苯并（1,2-b: 4,5-b'）二噻吩]-2,6-二基-alt-(4-（2-乙基己醇基）噻吩[3,4-b]噻吩-)-2-6-二基]（PBDTTT-c）与分子掺杂三[1-（三氟乙醇基）2-（三氟甲基）乙烷-1,2-二噻吩](Mo（tfd-COCF3)(3)）在高掺杂浓度下表现出输运性能下降，这限制了通过有机半导体掺杂所能达到的性能。利用扫描电镜分析了空穴电导率和跳跃输运活化能的演化与层内聚集体形成的关系。利用透射电子显微镜、能量色散x射线分析和液态核磁共振实验确定了聚集体的组成。该研究解释了高掺杂浓度下掺杂效率有限的原因，并强调了提高掺杂效率的必要性，以便能够降低掺杂浓度并不对电导率产生负面影响。
The polymer Poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b: 4,5-b') dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)thieno [3,4-b] thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the molecular dopant tris[1-(trifluoroethanoyl)2-(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd-COCF3)(3)) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning Electron Microscopy is used to correlate the evolution of hole conductivity and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energydispersive X-ray analysis along with liquid-state Nuclear Magnetic Resonance experiments are carried out to determine the composition of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concentrations and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concentration and not negatively affect conductivity.