The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
复制标题
InGaN/GaN MQW LED 电致发光光谱双发射峰的起源
DOI：
10.1016/j.jcrysgro.2006.10.167
复制
发表时间：
2007-01-01
影响因子：
1.8
通讯作者：
Zhang, G. Y.
中科院分区：
文献类型：
--
作者：
Chen, Z. Z.;Liu, P.;Zhang, G. Y.
In this work, InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) wafer with two emission peaks were grown by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), Ruthford backscattering (RBS), cathodoluminescence (CL), electroluminescence (EL) and emission microscope (EM) measurements were performed to study the recombination mechanism of InGaN QWs. The green spots and blue floccules in EM images were assigned to In-rich quantum dots (QDs) and modified QW by piezoelectric field. The wavelengths for both blue and green emissions do not shift until the injection level reach to 2 x 10(4) mA/cm(2). In CL images, the modified QWs assigned by EM and EL have a broad band tail expanding to 526 nm. (c) 2006 Elsevier B.V. All rights reserved.
