Study of HF-Treated Heavily-Doped Si Surface Using Contact Angle Measurements
Study of HF-Treated Heavily-Doped Si Surface Using Contact Angle Measurements
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使用接触角测量研究 HF 处理的重掺杂硅表面
DOI：
10.1143/jjap.33.6508
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发表时间：
1994
影响因子：
1.5
通讯作者：
M. Maeda
中科院分区：
文献类型：
--
作者：
Yasuhiro Sato;M. Maeda
用接触角测量方法研究了重掺硅在氢氟酸(HF)溶液中处理后的表面化学。水在疏水硅表面的饱和接触角受导电类型和掺杂浓度的影响。与磷掺杂表面相比，掺硼表面具有更小的接触角，这与更大的极向力相互作用能相对应。这种极力相互作用是由于在HF溶液中通过水解反应取代Si-F键的Si-OH键与H2O分子之间的氢键作用。此外，在极稀HF溶液中浸泡过程中，根据表面取向的不同，可以观察到显著不同的氢终止过程。
The surface chemistry of heavily-doped Si treated in a hydrofluoric acid (HF) solution is evaluated using contact angle measurements. The saturated contact angles of H2O on hydrophobic Si surfaces are affected by conduction types and dopant concentrations. Boron-doped surfaces show smaller contact angles, which corresponds to the larger polar-force interaction energy, than phosphorous-doped surfaces. The polar-force interaction is due to the hydrogen bondings between Si–OH bonds, which replace Si–F bonds through hydrolysis reaction in the HF solution, and H2O molecules. In addition, a marked difference in the hydrogen termination process can be observed, depending on the surface orientation, during the dip in extremely dilute HF solution.