Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
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DOI：
10.1063/5.0122919
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发表时间：
2023-02
影响因子：
4
通讯作者：
Agnes Maneesha Dominic Merwin Xavier;A. Ghosh;Sheikh Ifatur Rahman;A. Allerman;S. Arafin;S. Rajan
中科院分区：
文献类型：
--
作者：
Agnes Maneesha Dominic Merwin Xavier;A. Ghosh;Sheikh Ifatur Rahman;A. Allerman;S. Arafin;S. Rajan
Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.
