Langasite Crystal Microbalance Used for In-Situ Monitoring of Amorphous Silicon Carbide Film Deposition
Langasite Crystal Microbalance Used for In-Situ Monitoring of Amorphous Silicon Carbide Film Deposition
复制标题
用于原位监测非晶碳化硅薄膜沉积的硅锰矿晶体微天平
DOI：
10.1149/2.006202jss
复制
发表时间：
2012
影响因子：
2.2
通讯作者：
Yurie Tanaka
中科院分区：
文献类型：
--
作者：
Hitoshi Habuka;Yurie Tanaka
采用硅酸镓晶体微天平（LCM）对化学气相沉积过程进行了在线监测。当在600 ℃下由单甲基硅烷气体形成无定形碳化硅膜时，由膜沉积引起的重量增加可以通过在反应器中达到各种参数（例如气体密度、气体粘度和温度）的稳态之后的LCM频率降低来测量。在单甲基硅烷气体浓度为5%时，LCM频率的变化率为-10 Hz/s。该值对应于0.4nm/min的碳化硅膜沉积速率，其由使用相同生长条件获得的膜厚度评估。虽然LCM频率也取决于压力和温度，但是当膜沉积速率为nm/min的量级时，膜沉积速率可以通过LCM原位监测来更精确地控制。
An in-situ measurement method using a langasite crystal microbalance (LCM) was evaluated for monitoring chemical vapor deposition. When an amorphous silicon carbide film was formed from monomethylsilane gas at 600 C, the weight increase caused by the film deposition could be measured by the LCM frequency decrease after reaching the steady-state of various parameters, such as the gas density, the gas viscosity, and the temperature, in the reactor. The changing rate of the LCM frequency at the monomethylsilane gas concentration of 5% was− 10 Hz/s. This value corresponded to the silicon carbide film deposition rate of 0.4 nm/min, which was evaluated from the film thickness obtained using the same growth condition. Although the LCM frequency also depends on the pressure and temperature, the film deposition rate can be more accurately controlled by the LCM in-situ monitoring when the film deposition rate is on the order of nm/min.