Hybrid silicon modulators
Hybrid silicon modulators
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DOI：
10.3788/col20090704.0280
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发表时间：
2009-04-10
影响因子：
3.5
通讯作者：
Bowers, J. E.
中科院分区：
文献类型：
--
作者：
Chen, Hui-Wen;Kuo, Yinghao;Bowers, J. E.
使用混合硅消逝平台已经展示了许多有源元件，包括激光器、放大器。和探测器。在这封信中。提出了两种混合硅调制器，它们构成了光通信平台的基石。一种混合型硅电吸收调制器。该器件适用于在-5V和16 GHz调制带宽下消光比为10d B的高速互连。此外，还证明了一种利用多量子阱载流子耗尽的混合型硅Mach-Zehnder调制器，其电压长度乘积为2V.mm，光带宽为150 nm，大信号调制可达10 Gb/S。
A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers. and detectors. In this letter. two types of hybrid silicon modulators, fulfilling the building blocks in optical communication oil this platform, are presented. A hybrid silicon electroabsorption modulator. suitable for high speed interconnects with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.