Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
复制标题
DOI：
10.1063/1.1484546
复制
发表时间：
2002-06-10
影响因子：
4
通讯作者：
Chyi, JI
中科院分区：
文献类型：
--
作者：
Feng, SW;Cheng, YC;Chyi, JI
基于随波长和温度变化的时间分辨光致发光（PL）测量，提出了InGaN/GaN量子阱结构中载流子在不同局域态（空间分布）能级之间的输运机制，解释了PL强度的早期快速衰减、延迟缓慢上升和扩展缓慢衰减.在一定的热能作用下，载流子输运过程得到增强，克服了空间分布的势能极小值之间的势垒。随着载流子输运过程中的载流子供应，在对应于深局域态的波长处的延长的PL衰减时间可以高达80 ns。(C)2002年美国物理学会。
Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. With carrier supply in the carrier transport process, the extended PL decay time at wavelengths corresponding to deeply localized states can be as large as 80 ns. (C) 2002 American Institute of Physics.