Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells
Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells
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硅太阳能电池载流子选择性接触中 a-Si:H 薄膜的激光结晶和掺杂剂活化
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发表时间：
2019
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通讯作者：
M. Gupta
中科院分区：
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作者：
George C. Wilkes;A. Upadhyaya;A. Rohatgi;M. Gupta
在此，我们提出了一种脉冲激光加工方法，用于高 n 掺杂非晶硅 (a-Si:H) 载流子选择性层的结晶和掺杂剂激活，以实现高电导率、高载流子寿命、低发射极饱和电流和有限的表面层加热，而不是高温炉退火诱导加热体硅晶圆。我们证明了结晶度的提高和层电阻率的降低，而不影响表面钝化质量。此外，我们还研究了成形气体退火 (FGA) 在进一步改善激光加工多晶硅层钝化方面的作用，以实现 <2 mΩ•cm 薄膜电阻率、2.1 ms 有效载流子寿命、685 mV 隐含开路电压 (iVOC) 和 27 fA/cm2 复合电流密度 (J0)，并有可能通过激光工艺优化进一步改善钝化。
Herein we present a pulsed laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier selective layer for high conductivity, high carrier lifetime, low emitter saturation current and limited surface layer heating as opposed to high temperature furnace annealing induced heating of the bulk Si wafer. We demonstrate increased crystallinity and reduced layer resistivity, without impacting surface passivation quality. Additionally, we examine the role of forming gas annealing (FGA) on further improving the passivation of laser-processed polysilicon layers to achieve a <2 mΩ•cm film resistivity, 2.1 ms effective carrier lifetime, 685 mV implied open-circuit voltage (iVOC), and 27 fA/cm2 recombination current density (J0) with the potential for further passivation improvement via laser process optimization.