1 volt, 1 GHz nems switches
1 volt, 1 GHz nems switches
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1 V、1 GHz nems 开关
DOI：
10.1109/icsens.2010.5690502
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
D. Saab
中科院分区：
文献类型：
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作者：
M. Tabib;S. Venumbaka;K. Alzoubi;D. Saab
人们普遍认为，机电开关具有优越的通断电阻比、极低的漏电流和优于0.1 mV/decade的亚阈值斜率。众所周知，这些开关往往占地面积大，打开电压大，速度低（最多0.1 0.01µs开关时间），并且相对不可靠，并且由于接触电阻变化，颗粒，疲劳和粘滞而失效。在这里，我们提出了一类纳米机电开关，其导通电压为~ 1 V，速度非常高，<1 ns，占地面积非常小，约为1 μ m2。
It is generally accepted that electromechanical switches have superior off-to-on resistance ratios, very low leakage currents, and sub-threshold slope better than 0.1 mV/decade. It is also well-known that these switches tend to have large foot-print, large turn on voltages, low speeds (at best 0.1 0.01 µs switching time) and are relatively unreliable and fail due to contact resistance variations, particulates, fatigue, and stiction. Here we present a class of nano-electromechanical switches with ∼ 1 V turn-on voltage, very high speed of <1 ns, and very small footprint of around 1 µm2.