Ultra-thin GaAs solar cells with nanophotonic metal-dielectric diffraction gratings fabricated with displacement Talbot lithography
Ultra-thin GaAs solar cells with nanophotonic metal-dielectric diffraction gratings fabricated with displacement Talbot lithography
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采用位移塔尔博特光刻技术制造的具有纳米光子金属电介质衍射光栅的超薄砷化镓太阳能电池
DOI：
10.1002/pip.3463
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Sayre L
中科院分区：
文献类型：
--
作者：
Sayre L
超薄光致发光器件实现了轻巧灵活的外形，适用于新兴的地面应用，如电动汽车集成。这些设备还表现出固有的辐射耐受性和增加的比功率，因此独特地能够用于空间动力应用，在恶劣环境中提供更长的任务并降低发射成本。在这项工作中，开发了具有80 nm吸收体的GaAs太阳能电池，其短路电流超过单次通过限制。集成光管理用于补偿超薄吸收体固有的增加的光子传输，并且证明了比平面晶圆等效物提高68%的效率。这是使用晶片级技术（位移塔尔博特光刻）来制造后表面纳米光子光栅来实现的。光学模拟明确证实了法布里-珀罗和波导模式对所观察到的吸收增加的贡献，并且还证明了短路电流为26 mA/cm 2的路径，远远超过了双通极限。
Ultra‐thin photovoltaics enable lightweight flexible form factors, suitable for emerging terrestrial applications such as electric vehicle integration. These devices also exhibit intrinsic radiation tolerance and increased specific power and so are uniquely enabling for space power applications, offering longer missions in hostile environments and reduced launch costs. In this work, a GaAs solar cell with an 80‐nm absorber is developed with short circuit current exceeding the single pass limit. Integrated light management is employed to compensate for increased photon transmission inherent to ultra‐thin absorbers, and efficiency enhancement of 68% over a planar on‐wafer equivalent is demonstrated. This is achieved using a wafer‐scale technique, displacement Talbot lithography, to fabricate a rear surface nanophotonic grating. Optical simulations definitively confirm Fabry‐Perot and waveguide mode contributions to the observed increase in absorption and also demonstrate a pathway to short circuit current of 26 mA/cm2, well in excess of the double pass limit.