Infrared optical switch by the use of optically excited free carriers in semiconductors
Infrared optical switch by the use of optically excited free carriers in semiconductors
复制标题
利用半导体中光激发自由载流子的红外光开关
DOI：
10.1063/1.1150595
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发表时间：
2000
影响因子：
1.6
通讯作者：
T. Inoue
中科院分区：
文献类型：
--
作者：
M. Saito;T. Inoue
红外光开关是利用半导体中光激发载流子的红外吸收来实现的。使用Nd：YAG激光脉冲作为用于激发的门控信号。选择Si晶片作为开关元件，因为其带隙能量与Nd：YAG激光器的光子能量一致。白炽红外辐射的强度通过在Si晶片中诱导自由载流子吸收来控制。
Infrared light switching was achieved by using the infrared absorption due to the optically excited carriers in a semiconductor. A Nd:YAG laser pulse was used as a gate signal for excitation. A Si wafer was chosen as a switching element, since its band-gap energy coincides with the photon energy of the Nd:YAG laser. The intensity of incandescent infrared radiation was controlled by inducing free-carrier absorption in the Si wafer.