Angle dependent magnetotransport in transfer-free amorphous carbon thin films
Angle dependent magnetotransport in transfer-free amorphous carbon thin films
复制标题
无转移非晶碳薄膜中的角度依赖磁输运
DOI：
10.1088/0022-3727/49/41/415005
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发表时间：
2016-10-19
影响因子：
3.4
通讯作者：
Zhang, Xiaozhong
中科院分区：
文献类型：
--
作者：
Saleemi, Awais Siddique;Sagar, Rizwan Ur Rehman;Zhang, Xiaozhong
采用化学气相沉积（CVD）技术在SiO2衬底上制备了非晶碳薄膜。利用拉曼光谱和高分辨透射电子显微镜（HRTEM）分别对薄膜的结构和表面形貌进行了分析。使用X射线光电子能谱（XPS）估计C（sp（2））和C（sp（3））键的原子比%。该薄膜在2K和室温下的角磁阻分别为18%和1.6%。利用晶界散射（GBS）模型讨论了这种角度MR的机制。
Amorphous carbon thin films were fabricated on a SiO2 substrate using a chemical vapor deposition (CVD) technique. The structural and surface morphology of the films were analyzed by Raman spectrometry and high resolution transmission electron microscopy (HRTEM), respectively. The atomic ratio % of C(sp(2)) and C(sp(3)) bonds was estimated using x-ray photoelectron spectroscopy (XPS). The film shows angular magnetoresistance (MR) of 18% and 1.6% at 2 K and room temperature respectively. The mechanism of this angular MR was discussed by use of a grain boundary scattering (GBS) model.