Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range
Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range
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1.5 µm 波长范围内 DFB 激光器和 MQW 光调制器的单片集成
DOI：
10.1109/jqe.1987.1073439
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发表时间：
1987
影响因子：
2.5
通讯作者：
H. Asahi
中科院分区：
文献类型：
--
作者：
Y. Kawamura;K. Wakita;Y. Yoshikuni;Y. Itaya;H. Asahi
采用液相外延（LPE）/分子束外延（MBE）混合生长技术制备了一种结构改进的InGaAsP/InP DFB激光器和In-GaAs/InAlAs多量子阱光调制器单片集成器件。在室温连续工作条件下，DFB激光器输出波长为1.556 μm。在调制器反向偏置电压为-5 V时，激光器和调制器之间的耦合区域很窄，调制深度高达55%。在这种单片器件中还实现了响应时间为300 ps的高速调制。
A monolithically integrated device with an improved structure consisting of an InGaAsP/InP DFB laser and an In-GaAs/InAlAs MQW optical modulator was fabricated by the LPE (liquid phase epitaxy)/MBE (molecular beam epitaxy) hybrid growth technique. The DFB laser in this device was operated at 1.556 μm under CW condition at room temperature. A narrow coupling region between laser and modulator results in a depth of modulation as high as 55 percent at a modulator reverse bias voltage of -5 V. High-speed modulation with a response time of 300 ps was also achieved in this monolithic device.