ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD
ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD
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DOI：
10.1088/0256-307x/27/12/128504
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发表时间：
2010-12
影响因子：
3.5
通讯作者：
Zhao Wang;D. Xin;Zhao Long;Shi Zhifeng;W. Jin;W. Hui;Xia Xiaochuan;Chang Yu-chun;Zhang Baolin;Du Guo-tong
中科院分区：
文献类型：
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作者：
Zhao Wang;D. Xin;Zhao Long;Shi Zhifeng;W. Jin;W. Hui;Xia Xiaochuan;Chang Yu-chun;Zhang Baolin;Du Guo-tong
采用原位金属有机化学气相沉积（MOCVD）技术制备了MgO栅极介质ZnO透明薄膜晶体管。我们采用不间断生长的方法来简化制作步骤，避免外延过程中意外的污染。MgO层具有较宽的带隙（7.7eV）和较高的介电常数（9.8），有助于减小栅漏电流，并在可见光波段具有较高的透明度。XRD测试表明ZnO层具有较高的晶体质量。器件的场效应迁移率和通断电流比分别为2.69 cm2 V−1s−1和~ 1 × 104。
ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7.7eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69 cm2 V−1s−1 and ~ 1 × 104, respectively.