Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts
Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts
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DOI：
10.1063/1.4878979
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发表时间：
2014-05-28
影响因子：
3.2
通讯作者：
Oda, S.
中科院分区：
文献类型：
--
作者：
Kamioka, J.;Kodera, T.;Oda, S.
研究了在Si/SiGe调制掺杂晶片上制作的栅量子点接触的电导噪声的频率特性。1/f（2）噪声是随机电报噪声的特征，通过在全局顶栅上施加负偏置以降低局部栅电压来降低。来自大的全局栅极电压的直接泄漏也引起随机电报噪声，因此，存在操作量子点测量的合适点。(C)2014 AIP Publishing LLC.
The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f(2) noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement. (C) 2014 AIP Publishing LLC.