Structural and magnetic properties of Mn2.5Ga films
Structural and magnetic properties of Mn2.5Ga films
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DOI：
10.1088/1742-6596/200/6/062037
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
F. Wu;S. Mizukami;D. Watanabe;H. Naganuma;M. Oogane;Y. Ando;T. Miyazaki
中科院分区：
文献类型：
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作者：
F. Wu;S. Mizukami;D. Watanabe;H. Naganuma;M. Oogane;Y. Ando;T. Miyazaki
本文采用直流磁控溅射技术制备了多晶和外延Mn2.5Ga薄膜。较低的溅射功率和较高的热处理温度有利于提高多晶Mn2.5Ga薄膜中DO22相的比例，从而改善其磁性能，但不能观察到垂直磁各向异性(PMA)特性。相反，在铬缓冲的氧化镁衬底上生长的(001)取向的外延Mn2.5Ga薄膜同时具有低的饱和磁化强度和巨大的PMA特性。
In this work polycrystalline and epitaxial Mn2.5Ga films were prepared by dc magnetron sputtering technique. The lower sputtering power and higher annealing temperature are found to be beneficial for increasing ratio of DO22 phase in the polycrystalline Mn2.5Ga films, leading to the improved magnetic properties although perpendicular magnetic anisotropy (PMA) properties cannot be observed. On the contrary, (001)-oriented epitaxial Mn2.5Ga films grown on Cr buffered MgO substrates possess low saturation magnetization and giant PMA properties simultaneously.