Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
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垂直 GaN-on-GaN 肖特基势垒二极管的无电流崩塌和快速反向恢复性能
DOI：
10.1109/tpel.2018.2876444
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发表时间：
2019-06-01
影响因子：
6.7
通讯作者：
Sheng, Kuang
中科院分区：
文献类型：
--
作者：
Han, Shaowen;Yang, Shu;Sheng, Kuang
最近出现的独立GaN衬底使得垂直GaN功率器件的发展成为可能。本文介绍了一种新型垂直GaN-on-GaN肖特基势垒二极管（SBD）的动态导通电阻（R-ON）和反向恢复特性。垂直GaN-on-GaN SBD表现出快速反向恢复，具有低R-ON中心点Q（rr）品质因数。第一次，无电流崩溃性能（即，没有动态R-ON退化）已经在不同的开关条件下在垂直GaN功率整流器中被实验验证，所述开关条件包括：高达500 V的关断状态应力偏置、10（-6）-10（2）s内的关断状态应力时间、高达150摄氏度的高温以及不同的负载电流水平。
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (R-ON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low R-ON center dot Q(rr) figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic R-ON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10(-6)-10(2) s, high temperature up to 150 degrees C, and different load current levels.