Ordered n-type ZnO nanorod arrays
Ordered n-type ZnO nanorod arrays
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DOI：
10.1063/1.2907197
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发表时间：
2008-04
影响因子：
4
通讯作者：
Huijuan Zhou;J. Fallert;J. Sartor;R. Dietz;C. Klingshirn;H. Kalt;D. Weissenberger;D. Gerthsen;H. Zeng;W. Cai
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文献类型：
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作者：
Huijuan Zhou;J. Fallert;J. Sartor;R. Dietz;C. Klingshirn;H. Kalt;D. Weissenberger;D. Gerthsen;H. Zeng;W. Cai
以铟为生长催化剂，同时作为掺杂源，采用气相传输法在p-GaN scinAl 2 O3衬底上垂直生长了n型ZnO单晶纳米棒有序阵列。低温光致发光测试结果表明，纳米棒的紫外区主要是In相关的中性施主束缚激子发光。在单个n-ZnO纳米棒上进行的电输运测量产生约50- 200 k Ω的电阻和2.0×10−2Ωcm的典型比电阻率。与名义上未掺杂的ZnO纳米棒相比，通过引入In，电阻率降低了一个数量级。
Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN∕Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single n-ZnO nanorods yield resistances of about 50–200kΩ and a typical specific resistivity of 2.0×10−2Ωcm. The resistivity is one order of magnitude reduced by introducing In compared to the nominally undoped ZnO nanorods.