Lasing in GaAs/AlGaAs self-assembled quantum dots

Lasing in GaAs/AlGaAs self-assembled quantum dots
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DOI:
10.1063/1.2372448
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发表时间:
2006-10-30
影响因子:
4
通讯作者:
Koguchi, N.
Koguchi, N.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Mano, T.;Kuroda, T.;Koguchi, N.

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作者展示了通过液滴外延生长的自组装环形 GaAs 量子点 (QD) 的光泵激光作用。对 QD 形状从锥形点到环形点的形态控制导致 QD 系综的光致发光光谱带很窄,反映了它们的小尺寸分布。他们使用环形量子点作为活性激光介质,在高达 300 K 的温度下观察到基态的多模态受激发射。(c) 2006 年美国物理研究所。
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