Silicon detectors for the sLHC
Silicon detectors for the sLHC
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DOI：
10.1016/j.nima.2011.04.045
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发表时间：
2011-12-01
影响因子：
1.4
通讯作者：
Zorzi, N.
中科院分区：
文献类型：
--
作者：
Affolder, A.;Aleev, A.;Zorzi, N.
在当前的粒子物理实验中，硅条探测器被广泛用作内部跟踪层的一部分。这种探测器的一个可预见的大规模应用包括大型强子对撞机（LHC）、超级LHC或sLHC的亮度升级，其中需要具有极强辐射硬度的硅探测器。CERN RD 50协作的使命声明是为甚高光度对撞机开发抗辐射半导体器件。因此，本文提出的研发计划的目的是开发能够在sLHC条件下运行的硅粒子探测器。研究在不同的领域取得了进展，如缺陷表征，缺陷工程和完整的检测系统。将介绍这些领域的最新成果。这包括特别是一个改进的理解的宏观变化的有效掺杂浓度的基础上识别的个别微观缺陷，结果从照射与不同的粒子类型的混合物预期的sLHC，和观察的电荷倍增效应在严重照射的检测器在非常高的偏置电压。(C)2011 Elsevier B.V.保留所有权利。
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. (C) 2011 Elsevier B.V. All rights reserved.