Extremely low surface recombination in 1 O cm n-type monocrystalline silicon
Extremely low surface recombination in 1 O cm n-type monocrystalline silicon
复制标题
1 O cm n 型单晶硅中极低的表面复合
DOI：
10.1002/pssr.201600307
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Bonilla R
中科院分区：
文献类型：
--
作者：
Bonilla R
高效硅太阳能电池的最新发展的一个关键要求是其表面的出色钝化。在这项工作中，等离子体增强化学气相沉积的三层电介质组成的非晶硅，氧化硅和氮化硅，充电extraperitives使用电晕，已被用来证明极低的表面复合。采用Richter体寿命参数化，得到了平面浮区n型1 Ω cm硅在Δn= 10 ~（15）cm ~（-3）处的有效表面复合速度Seff = 0.1 cm/s。这相当于饱和电流密度J 0 s = 0.3 fA/cm 2，1个太阳的开路电压为738 mV。这些表面复合参数是1 Ω cm c-Si报告的最低参数之一。阻抗谱和电晕寿命测量的组合表明，出色的化学钝化是由于在氮化物沉积期间氢化的Si和a-Si层之间的界面处的状态的小空穴捕获截面。（© 2016 The Authors.Phys. Status Solidi RRLpublished by WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
A key requirement in the recent development of highly efficient silicon solar cells is the outstanding passivation of their surfaces. In this work, plasma enhanced chemical vapour deposition of a triple layer dielectric consisting of amorphous silicon, silicon oxide and silicon nitride, charged extrinsically using corona, has been used to demonstrate extremely low surface recombination. Assuming Richter's parametrisation for bulk lifetime, an effective surface recombination velocitySeff= 0.1 cm/s at Δn= 1015cm–3has been obtained for planar, float zone,n‐type, 1 Ω cm silicon. This equates to a saturation current densityJ0s= 0.3 fA/cm2, and a 1‐sun implied open‐circuit voltage of 738 mV. These surface recombination parameters are among the lowest reported for 1 Ω cm c‐Si. A combination of impedance spectroscopy and corona‐lifetime measurements shows that the outstanding chemical passivation is due to the small hole capture cross section for states at the interface between the Si and a‐Si layer which are hydrogenated during nitride deposition. (© 2016 The Authors.Phys. Status Solidi RRLpublished by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)