Electron spin resonance observation of gate-induced charge carriers in organic field-effect devices fabricated on silicon substrates

Electron spin resonance observation of gate-induced charge carriers in organic field-effect devices fabricated on silicon substrates
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硅衬底上制造的有机场效应器件中栅极感应电荷载流子的电子自旋共振观察

DOI:
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发表时间:
2007
期刊:
Jpn. J. Appl. Phys. 46
影响因子:
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通讯作者:
K. Marumoto and S. Kuroda
K. Marumoto and S. Kuroda
中科院分区:
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文献类型:
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作者:
S. Watanabe;K. Ito;H. Tanaka;H. Ito;K. Marumoto and S. Kuroda

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