Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.
Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.
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DOI：
10.1021/acsami.6b05636
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发表时间：
2016-07
影响因子：
9.5
通讯作者：
Xiaohui Feng;T. Yu;Yang Wei;C. Ji;Yutian Cheng;Hua Zong;Kun Wang;Zhijian Yang;X. Kang
中科院分区：
文献类型：
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作者：
Xiaohui Feng;T. Yu;Yang Wei;C. Ji;Yutian Cheng;Hua Zong;Kun Wang;Zhijian Yang;X. Kang
提出了一种新的纳米异质外延方法，即分组多步纳米异质外延（GM-NHE），通过金属有机物气相外延获得高质量的氮化镓（GaN）外延层。该方法结合了亚100 nm成核和多步横向生长的效果，通过使用低成本但独特的碳纳米管掩模，其由具有准周期性2D填充因子的纳米级生长窗口组成。结果表明，GM-NHE能有效地降低异质衬底上的穿透位错密度（TDD），调节异质衬底上的残余应力，且不会产生再生长。结果表明，GaN外延层具有4.51 × 10（7）cm（-2）的均匀低TDD和2D调制应力，并极大地提高了后续410 nm近紫外发光二极管的性能。通过这种方法，利用纳米掩模的简易制作和一次性外延工艺，GaN外延层在纳米技术的辅助下得到了显著的改善，在高效率TDD敏感光电器件方面具有巨大的应用潜力。
A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices.