Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
复制标题
无损读出存储器Pt/SrBi2Ta2O9/CeO2/SiO2/Si结构的电学特性
DOI：
10.1143/jjap.37.4373
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
Byong
中科院分区：
文献类型：
--
作者：
D. Shin;Ho Nyung Lee;Y. Kim;I. Choi;Byong
研究了Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si结构的存储窗口和漏电流密度。通过在SrBi 2 Ta 2 O 9和SiO2之间插入CeO 2绝缘体，决定性地影响存储窗口的矫顽场变得更大，因此存储窗口也随着SrBi 2 Ta 2 O 9的电场而增加。Pt/SrBi_2Ta_2O_9（140 nm）/CeO_2/SiO_2/Si的存储窗口典型值在0.5 - 3.0 V范围内，在3 - 9 V的外加电压下，该值对于非破坏性读出存储器来说足够高。
Memory window and leakage current density of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO2 insulator between SrBi2Ta2O9 and SiO2 and thus the memory window also increases with an electric field to the SrBi2Ta2O9. A typical value of memory window for Pt/SrBi2Ta2O9(140 nm)/CeO2/SiO2/Si is in the range of 0.5 – 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 – 9 V. The leakage current density is remained at 3 ×10-8 A/cm2 until the applied voltage increases up to 10 V.