An Embeddable SOI Radiation Sensor
An Embeddable SOI Radiation Sensor
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嵌入式 SOI 辐射传感器
DOI：
10.1109/tns.2009.2033474
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发表时间：
2009
影响因子：
1.8
通讯作者：
A. Robinson
中科院分区：
文献类型：
--
作者：
M. Shaneyfelt;T. A. Hill;T. Gurrieri;J. Schwank;R. Flores;P. Dodd;S. M. Dalton;A. Robinson
本文论证了研制可埋入式SOI埋氧MOS剂量计（RadFET）的可行性。该剂量计利用商业SOI晶片掩埋氧化物中辐射诱导电荷积累的固有特性。分立SOI埋氧RadFET和全功能读出电路已在Sandia的CMOS 7抗辐射SOI技术制造。离散RadFET已在各种辐射条件下照射，并进行照射后退火。数据显示，只有一个小的剂量率依赖性和小于10%的退火或衰减的剂量计的输出特性时，所有引脚短接照射。这些结果表明，在相同的偏置条件下照射的双介质RadFET的衰落少，并支持使用SOI埋氧RadFET的低剂量率的应用。读出电路也已被设计和制造，以监测的变化，在关闭状态泄漏电流引起的辐射诱导的电荷积累在埋氧剂量计。读出电路的模拟数字输出随关断状态漏电流线性变化。读出电路的初步辐射特性表明，读出电路中辐射诱导电荷积累对剂量计输出无杂散影响。这些结果表明，它是可行的，以开发一个可嵌入的SOI埋氧RadFET作为一个有吸引力的选择，许多低功耗，低剂量率的应用，需要实时的总电离剂量辐射水平的知识。
The feasibility of developing an embeddable silicon-on-insulator (SOI) buried oxide MOS dosimeter (RadFET) has been demonstrated. This dosimeter takes advantage of the inherent properties for radiation-induced charge buildup in the buried oxides of commercial SOI wafers. Discrete SOI buried oxide RadFETs and fully-functional read-out circuitry have been fabricated in Sandia's CMOS7 radiation-hardened SOI technology. Discrete RadFETs have been irradiated under various radiation conditions and subjected to post-irradiation anneals. Data show only a small dose rate dependence and less than a 10% annealing or fade of the dosimeters output characteristics when irradiated with all pins shorted. These results show less fade than dual-dielectric RadFETs irradiated under the same bias conditions and support the use of SOI buried oxide RadFETs for low dose rate applications. Read-out circuitry has also been designed and fabricated to monitor changes in the ¿off¿ state leakage current induced by radiation-induced charge buildup in the buried oxide dosimeter. The analog-to-digital output from the read-out circuit changes linearly with the ¿off¿ state leakage current. Preliminary radiation characterizations of the read-out circuitry show no spurious effects of radiation-induced charge buildup in the read-out circuitry on the dosimeter output. These results indicate it is feasible to develop an embeddable SOI buried oxide RadFET as an attractive choice for many low power, low dose rate applications requiring real-time knowledge of total ionizing dose radiation levels.