Structural change upon annealing of amorphous GeSbTe grown on Si(111)
Structural change upon annealing of amorphous GeSbTe grown on Si(111)
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DOI：
10.1063/1.4892394
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发表时间：
2014-08-07
影响因子：
3.2
通讯作者：
Calarco, R.
中科院分区：
文献类型：
--
作者：
Bragaglia, V.;Jenichen, B.;Calarco, R.
利用X射线衍射（XRD）、X射线反射率（XRR）和原子力显微镜（AFM）研究了Si（111）衬底上分子束外延生长的非晶GeSbTe（GST）薄膜退火后的结构变化。XRD曲线显示，亚稳立方相和稳定的六方相都是以单一的面外取向获得的。XRR研究表明，退火后密度增加，随之而来的厚度减少，根据文献。从XRD和AFM的研究，它出现的结晶基板作为一个模板的薄膜，有利于结晶的非晶GST成[111]取向的亚稳立方相，后者变成[0001]稳定的六方相较高的退火温度。(C)2014 AIP Publishing LLC.
The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature. (C) 2014 AIP Publishing LLC.