The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.
The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.
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DOI：
10.1186/1556-276x-6-130
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发表时间：
2011-02-10
影响因子：
--
通讯作者：
Willander M
中科院分区：
文献类型：
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作者：
Alvi NH;Ul Hasan K;Nur O;Willander M
本文研究了氧化锌（ZnO）纳米管/p-GaN发光二极管（LED）在不同气氛（氩气、空气、氧气和氮气）中退火后的电致发光（EL）谱。采用水溶液化学法在p-GaN衬底上生长了ZnO纳米管。在600°C的不同气氛中退火生长的ZnO纳米管30 min。电致发光研究表明，空气，氧气和氮气退火气氛强烈影响ZnO的深能级发射带。从电致发光的研究中得出的结论是，在620和750 nm之间出现的红色发射涉及一个以上的深能级缺陷，并且ZnO中的红色发射可以归因于在620 nm范围内出现的氧化合物（Oi（1.99 eV）至690 nm（1.79 eV）的范围内出现的氧空位（Vo），以及在690 nm（1.79 eV）至750 nm（1.65 eV）的范围内出现的氧空位（Vo）。退火环境，尤其是氮气环境，也被发现极大地影响显色性，并将生长的LED的CRI从87增加到96。
In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.