Probe effect in scanning tunneling microscopy on Si(001) low-temperature phases
Probe effect in scanning tunneling microscopy on Si(001) low-temperature phases
复制标题
DOI：
10.1103/physrevb.70.235411
复制
发表时间：
2004-12-01
影响因子：
3.7
通讯作者：
Shigekawa, H
中科院分区：
文献类型：
--
作者：
Yoshida, S;Kimura, T;Shigekawa, H
本文系统地研究了扫描隧道显微镜（STM）测量参数对Si（100）表面两相平衡的影响，即探针效应对Si（100）二聚体在5 K和80 K下的翻转运动的影响。在此基础上，对Si（100）表面结构现象的复杂排列进行了理解。用STM和低能电子衍射研究了c（4x2）和p（2x2）结构在40 K以下的相变，证实了p（2x2）结构的出现。在这些研究中，观察到具有c（4x2）和p（2x2）结构的长程有序的相。
The probe effect, the effect of parameters in scanning tunneling microscopy (STM) measurement, on the Si(100) surface with two competing phases in delicate balance, was investigated systematically by reexamining its influence on the Si(100) dimer flip-flop motions at 5 and 80 K. On the basis of the results, the complex array of the phenomena of the Si(100) surface structures was comprehended. The phase transition between c(4x2) and p(2x2) structures below similar to40 K was studied by STM, as well as by low-energy electron diffraction, and the appearance of the p(2x2) structure at a reduced probe effect was confirmed. In these investigations, a phase with long-range ordering of the c(4x2) and p(2x2) structures was observed.